Critical dimension shrink through selective metal growth on metal hardmask sidewalls

ABSTRACT

A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

PRIORITY

This application is a continuation of and claims priority from U.S.patent application Ser. No. 14/727,132, filed on Jun. 1, 2015, entitled“CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METALHARDMASK SIDEWALLS,” the entire contents of which are incorporatedherein by reference.

BACKGROUND

The present disclosure generally relates to semiconductor deviceprocessing, and more specifically, to dual damascene structures.

Copper-based chips are semiconductor integrated circuits that use copperfor interconnections. Chips using copper interconnects can have smallermetal components than chips that use aluminum interconnects becausecopper is a better conductor than aluminum. Copper-based chips also useless energy to pass electricity through them.

Copper-based chips are patterned using additive patterning, also calleddamascene processing or dual damascene processing. In damasceneprocessing, generally, the underlying silicon oxide insulating layer ispatterned with open trenches where the conductor should be. A thickcoating of copper that overfills the trenches is deposited on thesilicon oxide. Chemical-mechanical planarization (CMP) is used to removethe copper that extends above the top of the insulating layer. Copperremaining within the trenches of the silicon oxide layer is not removedand becomes the patterned conductor.

Damascene processes generally form and fill a single feature with copperper damascene stage. Dual damascene processes generally form and filltwo features with copper at once, e.g., a trench overlying a via in adielectric material may both be filled with a single copper depositionusing dual-damascene processing. In integrated circuits, a via is asmall opening in the dielectric layer that allows a conductiveconnection between two metal layers.

SUMMARY

In one embodiment of the present disclosure, a method for fabricating aself-aligned via structure includes forming a tri-layer mask on aninter-level dielectric (ILD) layer, the ILD layer disposed over a lowermetal wiring layer, and the tri-layer mask including a first insulatinglayer, a second insulating layer, and a metal layer disposed between thefirst and second insulating layers; defining a trench pattern throughthe first insulating layer and the metal layer of the tri-layer mask,the trench pattern having a first width; defining a first via pattern ina lithographic mask over the trench pattern in the tri-layer mask, thefirst via pattern having a second width, and the second width beinglarger than the first width; growing a metal capping layer on an exposedsidewall of the trench pattern to decrease the first width of the trenchpattern to a third width, the third width defining a second via pattern;transferring the trench pattern into the ILD layer to form a trench; andtransferring the second via pattern through the ILD layer and into themetal wiring layer to form a via.

In another embodiment, a method for fabricating a self-aligned viastructure includes forming a tri-layer hard mask on an ILD layer, theILD layer is disposed over a metal wiring layer, and the tri-layer hardmask includes a first insulating layer, a second insulating layer, and ametal layer disposed between the first and second insulating layers;forming a lithographic mask on the tri-layer hard mask; defining atrench pattern through the first insulating layer and the metal layer ofthe tri-layer mask, the trench pattern having a first width; defining afirst via pattern in the lithographic mask over the trench, the firstvia pattern having a second width, and the second width being largerthan the first width; growing a metal capping layer selectively on aportion of the metal layer within the trench pattern to decrease thefirst width to a third width, the third width defining a second viapattern; transferring the trench pattern into the ILD layer to form atrench; and transferring the second via pattern through the ILD layerand into the metal wiring layer to form a via.

Yet, in another embodiment, a self-aligned via structure includes a ILDlayer disposed over a metal wiring layer; a trench extending through theILD layer, the trench being substantially parallel to the metal wiringlayer and having a first width; a via extending through the ILD layerand into the metal wiring layer, the via oriented substantiallyperpendicular to the trench and having a second width; wherein thesecond width of the via is smaller than the first width of the trench.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIGS. 1A-5B are a series of cross-sectional and top views illustrating amethod of selectively forming metal sidewalls on via structures inaccordance with an exemplary embodiment, in which:

FIG. 1A illustrates a cross-sectional side view of a standardlithographic mask formed over a tri-layer hard mask, and ILD layer, anda metal wiring layer;

FIG. 1B illustrates a cross-sectional side view after defining a trenchpattern in the photoresist layer of the standard lithographic mask ofFIG. 1A;

FIG. 1C illustrates a cross-sectional side view after transferring thetrench pattern through a metal layer of the tri-layer hard mask andremoving the standard lithographic mask of FIG. 1B;

FIG. 1D illustrates a top view of FIG. 1C;

FIG. 2A illustrates a cross-sectional side view of another standardlithographic mask defining a via over the structure in FIG. 1C;

FIG. 2B illustrates a cross-sectional side view of FIG. 2A aftertransferring the via pattern through the standard lithographic mask andremoving the photoresist layer;

FIG. 2C illustrates a top view of FIG. 2B;

FIG. 3A illustrates a cross-sectional side view of FIG. 2B afterselective metal growth on metal side walls of the trench;

FIG. 3B illustrates a top view of FIG. 3A;

FIG. 4A illustrates a cross-sectional side view of FIG. 3A after viatransfer etching into the ILD layer and removing the standardlithographic mask;

FIG. 4B illustrates a top view of FIG. 4A;

FIG. 4C illustrates a cross-sectional side view of FIG. 4A afterremoving the first insulating layer of the tri-layer hard mask;

FIG. 5A illustrates a cross-sectional side view of FIG. 4B after trenchtransfer etching into the ILD layer and removing the first insulatinglayer of the tri-layer hard mask;

FIG. 5B illustrates a top view of the cross-sections in FIGS. 4C and 5A;

FIG. 6A illustrates a comparative example of a top view of conventionalvias having diameters that are substantially the same as the trenchdiameters;

FIG. 6B illustrates a top view of vias formed in accordance with thepresent disclosure having vias with diameters that are less than thetrench diameters;

FIG. 7A illustrates a cross-sectional side view of copper trenches withselectively placed metal caps; and

FIG. 7B illustrates a cross-sectional schematic diagram of the coppertrenches of FIG. 7A.

DETAILED DESCRIPTION

Various lithography methods are used for defining via holes. For sub-80nanometer (nm) back end of line (BEOL) dual damascene structures, 193 nmimmersion single exposure lithography is reaching its limit for definingvias with suitable critical dimensions (CD). Using 193 nm immersionprocesses, via CDs are limited to about 60 nm.

Negative tone development (NTD) via lithography can theoretically printvias with CDs of about 50 nm, but with a staggered pitch size no smallerthan 80 nm. Although NTD double exposure double etch (LELE) vialithography can reduce the staggered via-to-via pitch size, for example,to about 50-60 nm, via CDs of less than 50 nm are not possible.

Accordingly, the present disclosure provides a method for reducing thevia CD by selectively growing a metal layer on metal hardmask sidewallsbefore etching the via and trench patterns in the dielectric layer. Thevia CD can be modulated along the self-aligned via (SAV) direction, andthe vias are confined within the metal trenches. Having vias with widthsthat are smaller than the abutting trenches reduces the via to adjacentmetal short concerns. Self-aligned vias having widths of less than 50 nmare formed using the disclosed selective metal growth methods.

The following definitions and abbreviations are to be used for theinterpretation of the claims and the specification. As used herein, theterms “comprises,” “comprising,” “includes,” “including,” “has,”“having,” “contains” or “containing,” or any other variation thereof,are intended to cover a non-exclusive inclusion. For example, acomposition, a mixture, process, method, article, or apparatus thatcomprises a list of elements is not necessarily limited to only thoseelements but can include other elements not expressly listed or inherentto such composition, mixture, process, method, article, or apparatus.

As used herein, the articles “a” and “an” preceding an element orcomponent are intended to be nonrestrictive regarding the number ofinstances (i.e. occurrences) of the element or component. Therefore, “a”or “an” should be read to include one or at least one, and the singularword form of the element or component also includes the plural unlessthe number is obviously meant to be singular.

As used herein, the terms “invention” or “present invention” arenon-limiting terms and not intended to refer to any single aspect of theparticular invention but encompass all possible aspects as described inthe specification and the claims.

As used herein, the term “about” modifying the quantity of aningredient, component, or reactant of the invention employed refers tovariation in the numerical quantity that can occur, for example, throughtypical measuring and liquid handling procedures used for makingconcentrates or solutions. Furthermore, variation can occur frominadvertent error in measuring procedures, differences in themanufacture, source, or purity of the ingredients employed to make thecompositions or carry out the methods, and the like. In one aspect, theterm “about” means within 10% of the reported numerical value. Inanother aspect, the term “about” means within 5% of the reportednumerical value. Yet, in another aspect, the term “about” means within10, 9, 8, 7, 6, 5, 4, 3, 2, or 1% of the reported numerical value.

Turning now to the Figures, FIGS. 1A-1D illustrate trench patterningaccording to an exemplary embodiment. FIG. 1A illustrates across-sectional side view of a semiconductor stack including a standardlithographic mask 190 over a metal wiring layer 110. An inter-leveldielectric (ILD) layer 120 is disposed on the metal wiring layer 110. Atri-layer hard mask 132 is formed over the ILD layer 120. The tri-layerhard mask 132 includes a first insulating layer 130 over the ILD layer120, a metal layer 140 over the first insulating layer 130, and a secondinsulating layer 150 over the the metal layer 140. The standardlithographic mask 190 is formed on the tri-layer hard mask 132. Thestandard lithographic mask 190 includes an organic planarizing layer(OPL) 160, an anti-reflective layer 170, and a photoresist layer 180.The anti-reflective layer 170 can be a silicon anti-reflective layer(SiARC).

The metal wiring layer 110 can include any metal or metal alloy.Non-limiting examples of suitable metals and metal alloys for the metalwiring layer 110 include copper, copper alloys, manganese, manganesealloys, cobalt, cobalt alloys, tungsten, tungsten alloys, or anycombination thereof.

The metal wiring layer 110 thickness is not intended to be limited. Inone aspect, the metal wiring layer 110 has a thickness in a range fromabout 10 nm to about 100 nm. In another aspect, the metal wiring layer110 has a thickness in a range from about 20 nm to about 50 nm. Yet, inanother aspect, the metal wiring layer 110 has a thickness about or inany range from about 10, 20, 30, 40, 50, 60, 70, 80, 90, and 100 nm.

The ILD layer 120 can include silicon dioxide, silicon nitride, siliconoxynitride, a metal oxide, a material with a dielectric constant fromabout 3.0 to about 2.0, glass, or any combination thereof. The ILD layer120 can be an oxide or a nitride or any dielectric material.

The ILD layer 120 thickness is not intended to be limited. In oneaspect, the ILD layer 120 has a thickness in a range from about 10 nm toabout 150 nm. In another aspect, the ILD layer 120 has a thickness in arange from about 50 nm to about 100 nm. Yet, in another aspect, the ILDlayer 120 has a thickness about or in any range from about 10, 20, 30,40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, and 150 nm.

The first insulating layer 130 and the second insulating layer 150 ofthe tri-layer hard mask 132 can be any suitable oxide material, oxideprecursor material, or nitride material. Non-limiting examples ofsuitable materials for the first oxide or nitride layer 130 and thesecond oxide or nitride layer 150 include tetraethyl orthosilicate(TEOS), silicon dioxide, silicon nitride, or any combination thereof.The first insulating layer 130 and the second insulating layer 150 canbe the same or different.

The first insulating layer 130 thickness is not intended to be limited.In one aspect, the first insulating layer 130 has a thickness in a rangefrom about 5 nm to about 70 nm. In another aspect, the first insulatinglayer 130 has a thickness in a range from about 5 nm to about 50 nm.Yet, in another aspect, the first insulating layer 130 has a thicknessabout or in any range from about 5, 10, 15, 20, 25, 30, 35, 40, 45, 50,55, 60, 65, and 70 nm.

The second insulating layer 150 thickness is not intended to be limited.In one aspect, the second insulating layer 150 has a thickness in arange from about 5 nm to about 70 nm. In another aspect, the secondinsulating layer 150 has a thickness in a range from about 5 nm to about50 nm. Yet, in another aspect, the second insulating layer 150 has athickness about or in any range from about 5, 10, 15, 20, 25, 30, 35,40, 45, 50, 55, 60, 65, and 70 nm.

The metal layer 140 can include any metal, metallic compound, ormetallic alloy that is conductive. The metal layer 140 can be formed byany suitable method, for example, by physical vapor deposition, chemicalvapor deposition, electroplating, or other suitable methods.Non-limiting examples of suitable materials for the metal layer 140include cobalt, cobalt tungsten phosphorus, ruthenium, titanium,titanium nitride, tantalum, tantalum nitride, tungsten, tungstennitride, or any combination thereof.

The OPL layer 160, the anti-reflective layer 170, and the photoresistlayer 180 are used as a standard lithographic mask 190. The standardlithographic mask 190 is used to pattern the underlying layers. The OPLlayer 160 is formed at a predetermined thickness to provide reflectivityand topography control during etching of the second oxide or nitridelayer 150 below. The thickness of the OPL layer 160 is in a range fromabout 50 nm to about 300 nm. The thickness of the anti-reflective layer170 is in range from about 50 nm to about 200 nm. The thickness of thephotoresist 180 is in a range from about 50 nm to about 200 nm.

The standard lithographic mask 190 defines a pattern for lithography andetching of the via and the trench, as described below, which will betransferred to the ILD layer 120. Initially, the pattern is defined inthe photoresist layer 180 of the standard lithographic mask 190 as shownin FIG. 1B, which illustrates a cross-sectional side view of FIG. 1Aafter defining the trench pattern 192 in the photoresist layer 180 toform a photomask. Subsequently, the trench pattern 192 is defined in theanti-reflective layer 170 and the OPL layer 160 by lithographicallyremoving portions of the anti-reflective layer 170 and the OPL layer 160in accordance with the pattern of the photoresist layer 190.

FIG. 1C illustrates a cross-sectional side view of FIG. 1B afterdefining the trench pattern 192 in accordance with the photoresist layer180 through the first insulating layer 130 and the metal layer 140. Thenthe standard lithographic mask 190 is removed. FIG. 1D illustrates a topview of FIG. 1C. The trench pattern 192 is defined in the metal layer140 and the first insulating layer 150 by etching portions of the layersin accordance with the pattern of the photoresist layer 190. As shown inFIG. 1D, the trench pattern 192 defined through the metal layer 140exposes the first insulating layer 130 beneath the metal layer 140. Thedefined trench pattern is substantially parallel to the metal wiringlayer 110.

The defined trench pattern has a first width w1. The first width w1 isin a range from about 5 nm to about 50 nm. In another aspect, the firstwidth w1 is in a range from about 10 nm to about 30 nm. Yet, in anotheraspect, the first width w1 is about or in any range from about 5, 10,15, 20, 25, 30, 35, 40, 45, and 50 nm.

The trench patterning shown and described in FIGS. 1A-1D is but oneembodiment. Other methods of trench patterning may be used to define thetrench pattern 192 through the first metal layer 140. Non-limitingexamples of methods for patterning the trench include 193 nm immersionlithography, extreme ultraviolet lithography (EUV), or combinations ofadvanced lithography and non-lithography techniques. In another example,the trench pattern is defined using a sidewall image transfer technique.

FIGS. 2A-2B illustrate via patterning of the semiconductor stacks inFIGS. 1A-1D. FIG. 2A illustrates a cross-sectional side view of FIG. 1Cafter applying another standard lithographic mask 250 to define a viapattern 240. The standard lithographic mask 250 includes a photoresistlayer 240, an anti-reflective layer 220, and an OPL layer 210. The viapattern 240 is initially defined in the photoresist layer 240.

FIG. 2B illustrates a cross-sectional side view of FIG. 2A aftertransferring the via pattern 240 through the anti-reflective layer 220and the OPL layer 210 and removing the photoresist layer 230. The viapattern 240 defines a hole abutting and substantially perpendicular tothe trench pattern 192. FIG. 2C illustrates a top view of FIG. 2B. Thevia pattern 240 defined through the standard lithographic mask 250exposes portions of the second insulating layer 150.

The via pattern 240 is defined by a second width w2. The second width w2is larger than the first width w1. The second width w2 is in a rangefrom about 25 nm to about 70 nm. In another aspect, the second width w2is in a range from about 30 nm to about 50 nm. Yet, in another aspect,the second width w2 is about or in any range from about 25, 30, 35, 40,45, 50, 55, 60, 65, and 70 nm.

The via patterning shown and described in FIGS. 2A-2C is but oneembodiment. Other methods of via patterning may be used to define thevia pattern 240 through the metal layer 140. Non-limiting examples ofmethods for patterning the via include 193 nm immersion lithography, EUVlithography, or combinations of advanced lithography and non-lithographytechniques. In another example, the via pattern 240 is defined usingdouble patterning through a litho-etch-litho-etch approach.

FIGS. 3A-3B illustrate a method for narrowing the via width using aselective metal capping method. FIG. 3A illustrates a cross-sectionalside view of FIG. 2B after selective metal growth on metal side walls ofthe trench. FIG. 3B illustrates a top view of FIG. 3A. A selective metalgrowth process is used to form a metal capping layer 310 only on theexposed sidewall of the trench pattern. The metal will selectively forma thin layer within the metal layer 140, which forms metal hard masksidewalls. The metal capping layer 310 decreases the first width w1 ofthe trench to a third width w3 (see FIG. 3B). The third width w3 of thenew (second) via pattern is smaller than both the trench (having firstwidth w1) and initial (first) via pattern having second width w2.

Using the selective metal growth method enables more freedom tomanipulate the via CD, without relying on reactive-ion etching (ME)alone for reducing via critical dimensions. The metal capping layer 310can be formed by any suitable method. In one exemplary method, chemicalvapor deposition (CVD) is used and a metal-organic precursor, such as,dicobalt hexacarbonyl t-butylacetylene (CCTBA), is used for thedeposition reaction at a suitable temperature. A deposition temperaturein a range from about 150° C. to about 250° C. can be used.

The metal capping layer 310 can include any metal or metal alloy.Non-limiting examples of suitable metals for the capping layer 310include cobalt, cobalt tungsten phosphorus, ruthenium, titanium,titanium nitride, tantalum, tantalum nitride, tungsten, tungstennitride, or any combination thereof.

The metal capping layer 310 thickness is not intended to be limited. Inone aspect, the metal capping layer 310 has a thickness in a range fromabout 1 nm to about 10 nm. In another aspect, the metal capping layer310 has a thickness in a range from about 1 nm to about 5 nm. Yet, inanother aspect, the metal capping layer 310 has a thickness about or inany range from about 1, 2, 3, 4, 5, 6, 7, 8, 9, and 10 nm.

The third width w3 defines the new via pattern and provides for a viawith a width that is less than the trench, defined by first width w1,and the original via, defined by second width w2. The third width w3 isin a range from about 3 nm to about 48 nm. In another aspect, the thirdwidth w3 is in a range from about 8 nm to about 28 nm. Yet, in anotheraspect, the third width w3 is about or in any range from about 3, 5, 8,10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, and 48 nm.

FIG. 4A illustrates a cross-sectional side view of FIG. 3A aftertransferring the via pattern into the ILD layer 120 and removing theanti-reflective layer 220 and the OPL layer 210. FIG. 4B illustrates atop view of FIG. 4A. The via pattern defined by third width w3 is etchedinto the ILD layer 120 to transfer the via pattern into the ILD layer120. FIG. 4C illustrates a cross-sectional side view of FIG. 4A afterremoving the second insulating layer 150 and further defining the via410 through the ILD layer 120 and into metal wiring layer 110.

After via transfer etching, the trench pattern is transfer etched intothe ILD layer 120. FIG. 5A illustrates a cross-sectional side view aftertrench transfer etching into the ILD layer 120 shown in FIG. 4B to formthe trench 510. In contrast to the via, the trench stops in the ILDlayer. FIG. 5B illustrates a top view of the cross-sectional views inFIGS. 4C and 5A along the a-a′ axis and the b-b′ axis, respectively. Thevia 410 is substantially perpendicular to the trench 510 and extendsinto, but not through, the ILD layer 120.

To complete the dual damascene structure, the tri-layer hard mask 132 isremoved. A barrier metal layer, for example, tantalum, tantalum nitride,titanium nitride, or titanium tungstate, is deposited to line the viaand trench within the dielectric layer. A metal, for example, copper, isthen deposited, for example, by electroplating, to fill the via andtrench. Initially, a seed layer of copper can be deposited by physicalvapor deposition (PVD), and then the copper can be electroplated. Thesurface is planarized using chemical mechanical planarization (CMP)processes to form the final dual damascene structure. The process can berepeated as needed to form the desired number of wiring levels, afterwhich processing continues as known in the art.

In one embodiment, the trench and the via are filled with a metal, andCMP is performed to form a dual damascene structure comprising an upperwiring layer in selective contact with the lower wiring layercorresponding to locations of the vias.

FIGS. 6A and 6B compare conventional dual damascene structures (FIG. 6A)with dual damascene structures prepared in accordance with the presentdisclosure (FIG. 6B). FIG. 6A is a comparative example and shows a topview of first metal trenches 610 connected to second metal trenches 620through vias 630. The width 650 of the vias 630 is substantially thesame as the width 640 of the trenches. As shown in FIG. 6B, inaccordance with the present disclosure the width 632 of the vias is lessthan the width 640 of the trench 652. The vias 632 are self-aligned withthe trenches 610 and 620.

EXAMPLE

FIG. 7A illustrates a cross-sectional side view of copper trenches 710and 712 within a dielectric 720. FIG. 7B illustrates a top view of thecopper trenches of FIG. 7A. Copper trench 710 has a width d1 of about180 nm, and copper trench 720 has a width d2 of about 160 nm. The coppertrenches 710 and 720 have selective metal caps 730 and 732 and Ta(N)liners 740 and 742.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, element components,and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A self-aligned via structure, comprising: a ILDlayer disposed over a metal wiring layer; a trench extending through theILD layer, the trench being substantially parallel to the metal wiringlayer and having a first width; a via extending through the ILD layerand into the metal wiring layer, the via oriented substantiallyperpendicular to the trench and having a second width; wherein thesecond width of the via is smaller than the first width of the trench.2. The self-aligned via structure of claim 1, further comprising abarrier metal lining the via and the trench within the ILD layer and themetal wiring layer
 3. The self-aligned via structure of claim 2, furthercomprising copper filling the trench and the via.
 4. The self-alignedvia structure of claim 1, wherein the first width is in a range fromabout 5 to about
 50. 5. The self-aligned via structure of claim 4,wherein the second width is in a range from about 25 to about
 70. 6. Theself-aligned via structure of claim 1, wherein the metal wiring layer iscopper or a copper alloy.
 7. The self-aligned via structure of claim 1,wherein the metal wiring layer is manganese, manganese alloys, cobalt,cobalt alloys, tungsten, tungsten alloys, or any combination thereof. 8.The self-aligned via structure of claim 1, wherein the first width is ina range from about 10 nm to about 30 nm
 9. The self-aligned viastructure of claim 1, wherein the via and the trench further comprise abarrier metal layer liner and a copper filling.
 10. The self-aligned viastructure of claim 9, wherein the barrier metal layer liner is tantalum,tantalum nitride, titanium nitride, titanium tungstate, or a combinationthereof.
 11. A self-aligned via structure, comprising: a ILD layerdisposed over a metal wiring layer; a trench extending through the ILDlayer, the trench being substantially parallel to the metal wiring layerand having a first width; a via extending through the ILD layer and intothe metal wiring layer, the via oriented substantially perpendicular tothe trench and having a second width; wherein the second width of thevia is smaller than the first width of the trench, and the trench andthe via comprise a barrier metal layer and a metal.
 12. The self-alignedvia structure of claim 11, further comprising a barrier metal lining thevia and the trench within the ILD layer and the metal wiring layer 13.The self-aligned via structure of claim 12, further comprising copperfilling the trench and the via.
 14. The self-aligned via structure ofclaim 11, wherein the first width is in a range from about 5 to about50.
 15. The self-aligned via structure of claim 14, wherein the secondwidth is in a range from about 25 to about
 70. 16. The self-aligned viastructure of claim 11, wherein the metal wiring layer is copper or acopper alloy.
 17. The self-aligned via structure of claim 11, whereinthe metal wiring layer is manganese, manganese alloys, cobalt, cobaltalloys, tungsten, tungsten alloys, or any combination thereof.
 18. Theself-aligned via structure of claim 11, wherein the first width is in arange from about 10 nm to about 30 nm
 19. The self-aligned via structureof claim 11, wherein the via and the trench further comprise a barriermetal layer liner and a copper filling.
 20. The self-aligned viastructure of claim 19, wherein the barrier metal layer liner istantalum, tantalum nitride, titanium nitride, titanium tungstate, or acombination thereof.